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Rayson

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Rayson Technology Ltd.


RAYSON HI-TECH(SZ) LIMITED was founded in 2016. It is a high-tech enterprise of memory chip integrated with design, research & development, package, testing and marketing.Headquartered in ShenZhen.ZhuHai has a chip R&D wholly owned subsidiary.The company has subsidiaries in HongKong and branch office in ShangHai.

The company has an independent brand Rayson, which includes embedded products like eMMC,DDR3,DDR4,LPDDR4/4X,LPDDR5,eMCP and uMCP, which are extensively applied in fields like mobile phone,tablet, OTT BOX,TV,vehicle mounted, artificial intelligence and internet of things.

The company owns a core team with over 18 years of industry experience, always focusing on memory chip industry and aiming to offer memory chips with high cost performance and solution plans for clients. Determined to make great contributions to the development of memory industry for China.



深圳市晶存科技有限公司

深圳市晶存科技有限公司成立于2016年,是一家集设计、研发、封装、测试和销售于一体的存储芯片高新技术企业,总部位于深圳,在珠海设有芯片研发全资子公司,在香港设有子公司,在上海设有分公司。

公司拥有自主品牌Rayson,涵盖eMMC、DDR3、DDR4、LPDDR4/4X、LPDDR5、eMCP和uMCP等嵌入式产品,广泛应用于手机、平板、OTT盒子、TV、车载、人工智能和物联网等多个领域。

公司拥有18年以上行业经验的核心团队,始终聚焦存储芯片产品,致力于为客户提供高性价比的存储芯片以及存储解决方案,立志为中国存储产业发展做出杰出的贡献!


DDR3


料号容量位宽速率工作电压工作温度封装工作状态
RS512M16VADF-107AT8Gb512M x 161866Mbps1.5V0~85℃FBGA 96Mass Production
RS256M16V0DB-107AT4Gb256M x 161866Mbps1.5V0~85℃FBGA 96Mass Production
RS128M16V8DB-107AT2Gb128M x 161866Mbps1.5V0~85℃FBGA 96Mass Production
RS128M16VMDC-107AT2Gb128M x 161866Mbps1.5V0~85℃FBGA 96Mass Production




DDR4


料号容量位宽速率工作电压工作温度封装工作状态
RS256M16Z0DC-75DT4Gb256M x 162667Mbps1.2V0~85℃FBGA 96Mass Production
RS256M16ZADD-75DT4Gb256M x 162667Mbps1.2V0~85℃FBGA 96Mass Production
RS512M16Z2DD-62DT8Gb512M x 163200Mbps1.2V0~85℃FBGA 96Mass Production
RS1G16Z3DK-62DT16Gb1G x 163200Mbps1.2V0~85℃FBGA 96Mass Production




LPDDR3


料号容量位宽速率工作电压工作温度封装工作状态
RS512M32LD3D2LMZ-125BT16Gbx 321866Mbps1.8 / 1.2 / 1.2V-25~85℃FBGA 178Mass Production
RS256M32LD3D2LMZ-125BT8Gbx 321600Mbps1.8 / 1.2 / 1.2V-25~85℃FBGA 178Mass Production
RS256M32LD3D1LMZ-125BT8Gbx 321866Mbps1.8 / 1.2 / 1.2V-25~85℃FBGA 178Mass Production
RS128M32LD3D1LMZ-125BT4Gbx 321600Mbps1.8 / 1.2 / 1.2V-25~85℃FBGA 178Mass Production


LPDDR4/4X


料号容量位宽速率工作电压工作温度封装工作状态
RS1536M32LB4D4BDT-53BT48Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Engineering Sample
RS768M32LB4D2BDS-53BT24Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS768M32LA4D4BDT-53BT24Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS1G32LM4D4BDT-53BT32Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS512M32LM4D2BDS-53BT16Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS768M32LZ4D4ANQ-75BT24Gbx 322667Mbps1.8 / 1.1 / 1.1V-25~85℃FBGA 200Mass Production
RS512M32LZ4D2ANP-75BT16Gbx 322667Mbps1.8 / 1.1 / 1.1V-25~85℃FBGA 200Mass Production
RS256M32LZ4D1ANP-75BT8Gbx 322667Mbps1.8 / 1.1 / 1.1V-25~85℃FBGA 200Mass Production
RS128M32LZ4D1ANP-75BT4Gbx 322667Mbps1.8 / 1.1 / 1.1V-25~85℃FBGA 200Mass Production
RS384M32LZ4D2ANP-75BT12Gbx 322667Mbps1.8 / 1.1 / 1.1V-25~85℃FBGA 200Mass Production
RS384M32LA4D2BDS-53BT12Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS256M32LZ4D2BNP-62BT8Gbx 323200Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS512M32LO4D1BDS-53BT16Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS512M32LS4D2BDS-53BT16Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200
RS768M32LP4D2BDS-53BT24Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS1G32LO4D2BDS-53BT32Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS1G32LF4D2BDS-53BT32Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production
RS2G32LF4D4BDT-53BT64Gbx 323733Mbps1.8 / 1.1 / 0.6V-25~85℃FBGA 200Mass Production


eMMC



料号容量协议工作温度封装工作状态
RSE17TAA-32G32GBeMMC 5.1-25~85℃FBGA 153Mass Production
RSE16TAA-16G16GBeMMC 5.1-25~85℃FBGA 153Mass Production
RSE15TAA-08G8GBeMMC 5.0-25~85℃FBGA 153Mass Production


eMCP


料号容量协议eMMCDRAM工作温度封装工作状态
-64GB+4GBeMMC 5.13D TLCLPDDR30~85℃FBGA 221Mass Production
-32GB+3GBeMMC 5.13D TLCLPDDR4X0~85℃FBGA 254Mass Production
-64GB+4GBeMMC 5.13D TLCLPDDR4X0~85℃FBGA 254Mass Production
-64GB+6GBeMMC 5.13D TLCLPDDR4X0~85℃FBGA 254Mass Production
-128GB+4GBeMMC 5.13D TLCLPDDR4X0~85℃FBGA 254Mass Production










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